Etch-back type semiconductor package, substrate and manufacturing method thereof

ABSTRACT

A semiconductor package, a substrate and a manufacturing method thereof are provided. The substrate comprises a conductive carrier, a first metal layer and a second metal layer. The first metal layer is formed on the conductive carrier and comprises an lead pad having an upper surface. The second metal layer is formed on the first metal layer and comprises a bond pad. The bond pad overlaps and is in contact with the upper surface of the first metal layer. The upper surface of the lead pad is partially exposed. A part of the bond pad overhang outward from the edge of the lead pad.

This application claims the benefit of U.S. provisional application Ser.No. 61/328,687, filed Apr. 28, 2010, the subject matter of which isincorporated herein by reference.

BACKGROUND

1. Technical Field

This invention relates in general to a package, substrate andmanufacturing method thereof, and more particularly to a semiconductorpackage, substrate and manufacturing method

2. Description of the Related Art

Along with the advance of electrical industry, the demand forsemiconductor packaging technology is booming. Generally speaking,electronic package consists of a silicon chip attached to the leadframe,uses encapsulating adhesive to seal the leadframe and the substrate toavoid moisture or damage caused by collision. The silicon chip haselectrical connection through the bond pad of the leadframe to allowelectrical connection with printed circuit board.

However, the leadframe with heavy weight and high volume is against thetrend to promote light, thin, short and small electronic products.

SUMMARY

This invention relates in general to a substrate, its manufacturingmethod thereof and a semiconductor package. The substrate and thesemiconductor package have external electrical connection throughelectrical points, so that the substrate and the semiconductor packageare thinner, which keeps in step with the trend to promote light, thin,short and small electrical products.

According to the first aspect of the present invention, a substrate isprovided. The substrate comprises a conductive carrier, a first metallayer and the second metal layer. The first metal layer is formed on theconductive carrier, wherein the first metal layer comprises an lead pad,and the lead pad has a first upper surface. The second metal layer isformed on the first metal layer, wherein the second metal layercomprises a bond pad, the bond pad overlaps and in contact with thefirst upper surface of the first metal layer, and the first uppersurface of the lead pad is partially exposed. Wherein, a part of thebond pad overhang outward from an edge of the lead pad.

According to the second aspect of the present invention, a semiconductorpackage is provided. The semiconductor package comprises of a firstmetal layer, a second metal layer, a semiconductor die and anencapsulation layer. The first metal layer is formed on the conductivecarrier, wherein the first metal layer comprises an lead pad, and thelead pad has a first upper surface and a first lower surface opposite tothe first upper surface. The second metal layer is formed on the firstmetal layer, wherein the second metal layer comprises a bond pad, thebond pad overlaps and in contact with the first upper surface of thefirst metal layer, the first upper surface of the lead pad is partiallyexposed, and a part of the bond pad overhang outward from an edge of thelead pad. The semiconductor die is electrically connected to the bondpad via a plurality of first connection elements. The encapsulationlayer encapsulates the first metal layer, the second metal layer and thesemiconductor die, wherein the first lower surface of the first metallayer is exposed.

According to the third aspect of the present invention, a manufacturingmethod of substrate is provided. The manufacturing method comprises thefollowing steps. A conductive carrier is provided. A first photo-resistlayer is formed on the conductive carrier. An lead pad opening is formedon the first photo-resist layer to expose the conductive carrier. Afirst metal layer is formed, wherein the first metal layer comprises anlead pad, the lead pad is formed in the lead pad opening of the firstphoto-resist layer and has a first upper surface. A second photo-resistlayer is formed on the first photo-resist layer. A bond pad opening isformed on the second photo-resist layer to expose the first uppersurface of the lead pad. A second metal layer is formed, wherein thesecond metal layer comprises a bond pad, the bond pad is formed in thebond pad opening of the second photo-resist layer and has a second uppersurface, and the bond pad overlaps and in contact with the first uppersurface of the lead pad. The first and second photo-resist layers areremoved, wherein the first upper surface of the lead pad is partiallyexposed and a part of the bond pad overhang outward from an edge of thelead pad.

According to the fourth aspect of the present invention, a manufacturingmethod of semiconductor package is provided. The manufacturing methodcomprises the following steps. A conductive carrier is provided. A firstphoto-resist layer is formed on the conductive carrier. An lead padopening is formed on the first photo-resist layer to expose theconductive carrier. A first metal layer is formed, wherein the firstmetal layer comprises an lead pad and a die-attach pad, the lead pad isformed in the lead pad opening of the first photo-resist layer and has afirst upper surface and a second upper surface opposite the first uppersurface, the die-attach pad is formed in the die-attach pad opening andhas a first upper surface. A second photo-resist layer is formed on thefirst photo-resist layer. A bond pad opening is formed on the secondphoto-resist layer to expose the first upper surface of the lead pad andthe first upper surface of the die-attach pad. A second metal layer isformed, wherein the second metal layer comprises a bond pad, the bondpad is formed in the bond pad opening of the second photo-resist layerand has a second upper surface, and the bond pad overlaps and in contactwith the first upper surface of the lead pad. The first and secondphoto-resist layers are removed, wherein the first upper surface of thelead pad is partially exposed and a part of the bond pad overhangoutward from an edge of the lead pad. A semiconductor die is disposed onthe die-attach pad. The bond pad and the semiconductor die areelectrically connected via a plurality of first connection elements. Anencapsulation layer is formed to encapsulate the first metal layer, thesecond metal layer and the semiconductor die. The conductive carrier isremoved, wherein the first lower surface of the lead pad is exposed.

The invention will become apparent from the following detaileddescription of the preferred but non-limiting embodiments. The followingdescription is made with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross-sectional view of a semiconductor package accordingto an embodiment of the invention;

FIG. 2 shows a top view of the lead pad and the bond pad according toFIG. 1;

FIG. 3 shows a top view of the lead pad and the bond pad of anotherembodiment;

FIG. 4 shows a top view of the lead pad and the bond pad of anotherembodiment;

FIG. 5 shows a cross-sectional view of the lead pad and the bond pad ofanother embodiment;

FIG. 6 shows a top view of the die-attach pad and the die-attach barrierin FIG. 1;

FIG. 7A shows a top view of the substrate in FIG. 1;

FIG. 7B shows the cross-sectional view of FIG. 7A along the direction of7B-7B′

FIG. 8 shows a cross-sectional view of the semiconductor package of anembodiment of the invention;

FIG. 9 shows at least one solder ball formed on the semiconductorpackage;

FIGS. 10A-10I show the processes of manufacturing the substrate of FIG.1;

FIG. 11 shows the cross-sectional view of the semiconductor structuredepicted in FIG. 10I after the conductive carrier is removed;

FIG. 12 show the top view of a substrate of another embodiment.

DETAILED DESCRIPTION

Referring to FIG. 1, a cross-sectional view of a substrate according toan embodiment of the invention is shown. The substrate 110 comprises aconductive carrier 110, a first metal layer 120, a second metal layer130, a first surface finishing layer 140 and a second surface finishinglayer 150.

The first metal layer 120 and the second metal layer 130 may be selectedfrom the group comprising of Cu, Ni or combinations thereof. The firstmetal layer 120 is formed on the surface 110 u of the conductive carrier110, the first metal layer forms at least one lead pad 121 and at leastone die-attach pad 122, and the lead pad 121 has the first upper surface121 u and the first lower surface 121 b.

The second metal layer 130 is formed on the first metal layer 120. Thesecond metal layer 130 forms at least one bond pad 131 and at least onedie-attach barrier 132. The bond pad 131 overlaps and in connection withthe first upper surface 121 u of the lead pad, and part of the firstupper surface 121 u is exposed, that is, the exposed part is not coverby the second metal layer 130.

Referring to FIG. 1, the first metal layer 120 and the second metallayer 130 form a leadframe structure, and the conductive carrier 110carries the leadframe structure. Wherein the lead pad 121 is an externallead and the bond pad 131 is an internal lead. Through the external andinternal lead in the leadframe structure, the semiconductor device (suchas the semiconductor die 160 according to FIG. 8) is electricallyconnected to the external electrical circuits. In addition, theleadframe structure may be a very thin electroplated structure, whichreduces the thickness of the substrate 100 and the semiconductor packageformed thereof.

The first surface finishing layer 140 and the second surface finishinglayer 150 may comprise of a single layer or multiple layers. The firstsurface finishing layer 150 is formed on the second upper surface of thesecond metal layer 130 (such as the second upper surface 131 u of thebond pad 131 and the second upper surface 132 u of the die-attachbarrier 132). The first surface finishing layer 140 and the secondsurface finishing layer 150 is selected from the group consisting of Au,Pd, Ni, Cu, Sn, Ag and combinations thereof.

Referring to FIG. 2, a top view of the lead pad and the bond padaccording to FIG. 1 is shown. Preferably but not limited, the area ofthe second upper surface 131 u of the bond pad 121 is smaller than thearea of the first upper surface 121 u of the lead pad. This helps toreduce the amount of precious metals (such as Au) used on the secondfinishing layer. It also exposes more upper surface area of the lead pad121 for better adhesion after forming the semiconductor package (FIG.8).

Referring to FIG. 2, the center 121 c of the lead pad 121 is offset afirst distance D1 from the center 131 c of the corresponding bond pad131. In addition, the center 121 c is the geometric centre of the firstupper surface 121 u of the lead pad 121, and the center 131 c is thegeometric centre of the second upper surface 131 u of the lead pad 131.The first metal layer 120 and the second metal layer 130 form at leastone a step feature so that the adhesion between the encapsulation layer170, the first metal layer 120 and the second metal layer 130 isimproved.

Referring to FIG. 3, a top view of the lead pad and the bond pad ofanother embodiment is shown. The edge 421 s 1 of the lead pad 421 facestowards the die-attach pad. Preferably but not limited, the area of thesecond upper surface 431 u of the bond pad 431 is smaller than the areaof the second upper surface 421 u of the bond pad 421. The center 421 cof the lead pad 421 is offset a first distance D1 from the center 431 cof the corresponding bond pad 431. Preferably but not limited to, thecenter 431 c of the bond pad 431 coincides with that of thecorresponding lead pad 421 such that the bond pad 431 is firmly disposedon the lead pad 421

Referring to FIG. 4, a top view of the lead pad and the bond pad ofanother embodiment is shown. The center 221 c of the lead pad 221substantially coincides with the center 231 c of the corresponding bondpad 231. Under this situation, the two edges of the bond pad 231protrude from the corresponding two edges 221 s 1 and 221 s 2 of thelead pad 221.

The locking anchorage 131 a (shown in FIG. 1) of the bond pad 131overhangs outward from the edge 121 s 1 of the lead pad 121, wherein theedge 121 s 1 is facing towards the die-attach pad 122, in otherembodiments, the bond pad may overhang outward from other edge of thelead pad. The following description is made with reference to FIG. 5.

Referring to FIG. 5, a cross-sectional view of the lead pad and the bondpad of another embodiment is shown. The bond pad 131 overhangs outwardfrom the edge 121 s 2 of the lead pad 121, wherein the edge 121 s 2 isopposite to the edge 121 s 1. According to this embodiment, the edge 121s 2 and the edge 12151 are two opposite edges of the bond pad 131.

Referring to FIG. 6, a top view of the die-attach pad and the die-attachbarrier in FIG. 1 is shown. The die-attach pad 122 has a first uppersurface 122 u. The die-attach barrier 132 of the second metal layer 130surrounds the die-attach pad 122. The die-attach barrier 132 is formedalong the peripheral of the die-attach pad 122 and has a second uppersurface 132 u. Wherein, the peripheral of the die-attach pad 122 iscovered by the die-attach barrier 132, and part of the first uppersurface 122 u of the die-attach pad 122 is exposed. Preferably but notlimited, the area of the second upper surface 132 u of the die-attachbarrier 132 is smaller than the area of the first upper surface 122 u ofthe die-attach pad 122 to reduce amount of precious metals (such as Au)used on the second surface finishing layer and exposes more uppersurface area of the external pad for better adhesion after forming thesemiconductor package (FIG. 8).

The locking anchorage 132 a (shown in FIG. 1) of the die-attach barrier132 overhangs outward from the edge 122 s of the die-attach pad 122.Part of the die-attach barrier extends beyond the edges of thedie-attach pad to create a locking anchorage for the barrier/die-attachpad structure within the semiconductor package (FIG. 8) to prevent thestructure from dropping out and improve package reliability. Preferablybut not limited, the length of the locking anchorage is between 10 um to80 um. In addition, the center 122 c of the die-attach pad 122 is offseta second distance D2 from the corresponding extended axis of thedie-attach barrier 132 wherein the center 122 c is the geometric centerof the die-attach pad 122.

The first upper surface of the first metal layer is exposed to form adie disposing surface. Furthermore, the die-attach barrier 132 definesat least one cavity 132 r. The cavity 132 r exposes the first uppersurface 122 u of the die-attach pad 122. Preferably but not limited, thedie-attach barrier 132 is a ground ring which defines the cavity 132 r;or, in another embodiment, the die-attach barrier 132 comprises ofseveral blocks, and these blocks are positioned separately around thedie-attach pad to form the cavity 132 r, or these blocks are connectedtogether to form the cavity 132 r.

Referring to FIGS. 7A and 7B, a top view of the substrate in FIG. 1 isshown in FIG. 7A, and the cross-sectional view of FIG. 7A along thedirection of 7B-7B′ is shown in FIG. 7B. The conductive carrier 110comprises a cavity 110 r formed along a peripheral of the conductivecarrier 110. In one embodiment, the cavity 110 r may be omitted.

Referring to FIG. 8, a cross-sectional view of the semiconductor packageof an embodiment of the invention is shown. The semiconductor package100′ comprises a first metal layer 120, a second metal layer 130, afirst surface finishing layer 140, a second surface finishing layer 150,a semiconductor die 160 and an encapsulation layer 170. The first metallayer 120 forms at least an lead pad 121 and at least a die-attach pad122. Correspondingly, the second metal layer 130 forms a bond pad 131 onthe lead pad 121 and a die-attach barrier 132 on the die-attach pad 122.

When there are two or more semiconductor dies 160, the number of thedie-attach pads 122 may be the same as the semiconductor dies 160. Or,more semiconductor dies 160 may be positioned on a single die-attach pad122.

The semiconductor die 160 is positioned within the cavity 132 r andadhered to the first upper surface 122 u of the die-attach pad 122 by anadhesive 180, wherein adhesive 180 is constrained within the cavity 132r by the die-attach barrier 132. Because of the design of the die-attachbarrier 132, the adhesive 180 will not spill over to the neighboringsemiconductor die or out of the die-attach pad which can affectreliability. Preferably but not limited, the adhesive 180 herein isdie-attach epoxy or film.

The semiconductor die 160 is electrically connected to the bond pad 131through at least one first connection element 161. Preferably but notlimited, the first connection element 161 is gold wire, and the firstconnection element 161 connects the semiconductor die 160 to the secondsurface finishing layer 150, for electrically connections between thesemiconductor die 160 and the bond pad 131.

Although not shown in FIG. 8, in other embodiments, at least one secondconnection element may connect the semiconductor die 160 to thedie-attach barrier 132 for electrically grounding purposes. Preferablybut not limited, the second connection element is gold wire.

The encapsulation layer 170 comprises of novolac-based resin,epoxy-based resin and silicone-based resin and any encapsulationmaterial. The encapsulation layer 170 may also comprises of suitablefilling agent, such as powder silicon dioxide. In this embodiment, theencapsulation layer 170 is preferably (but not limited) moldingcompound. The encapsulation layer 170 encapsulates the first metal layer120, the second metal layer 130 and the semiconductor die 160, whereinthe first surface finishing layer 140 is exposed from the encapsulationlayer 170. In other embodiment, the semiconductor package 100′ may omitthe first surface finishing layer 140. Under this situation, the firstlower surface 121 b of the lead pad 121 and the second lower surface 122b of the die-attach pad 122 are exposed from the encapsulation layer170. Regardless whether the first surface finishing layer 140 or thefirst metal layer 120 is exposed, the semiconductor package 100′ can besubsequently attached to external circuit board via the lead pad 121 band the die-attach pad 122 for electrical connection and heatdissipation. Furthermore, solder ball may be attached to the lead pad121.

Referring to FIG. 9, at least one solder ball formed on thesemiconductor package is shown. The semiconductor package shown in FIG.9 comprises at least one solder ball 193 formed on the lead pad 121 orthe first surface finishing layer 140. The semiconductor package shownin FIG. 9 is disposed on the external circuit through the solder balls193.

The encapsulation layer 170 has at least a connection part 170 a, and itis positioned between the die-attach pad 122 and the lead pad 121.Because the locking anchorage 131 a of the bond pad 131 overhangsoutward from the edge of the lead pad 121, the locking anchorage 131 ais positioned on the connection part 170 a, the bond pad 131 is moresecurely positioned on the lead pad 121. Furthermore the lockinganchorage 131 a of the bond pad 131 is rigidly anchored within theinsulation layer 170 such that the bond pad/lead pad structure will notdrop out easily and gives better reliability. Similarly, because thelocking anchorage 132 a of die-attach barrier 132 overhangs outward fromthe edge of the die-attach pad 122, the locking anchorage 132 a ispositioned on the connection part 170 a, the die-attach barrier 132 ismore securely positioned on the die-attach pad 122. Furthermore thelocking anchorage 132 a of the die-attach barrier 132 is rigidlyanchored within the insulation layer 170 such that the die-attachbarrier/die-attach pad structure will not drop out easily and givesbetter reliability.

The following paragraphs describe a method of forming the substratedepicted in FIG. 1. The processes of manufacturing the substrate of FIG.1 are shown in FIGS. 10A-10I.

As shown in FIG. 10A, a conductive carrier 110 is provided. Theconductive carrier 110 comprises an upper surface 110 u and may be madeof a single layer or multiple layers. For multiple layers, theconductive carrier 110 comprises an inner layer and an outer clad layer.Preferably but not limited, the inner layer is steel having acoefficient of thermal expansion (CTE) between 10 to 15 ppm/° C. and theouter clad layer is copper. Compared to copper, the thermal expansioncoefficient (CTE) of steel is closer to or matches the CTE of themolding compound used to form the subsequent encapsulation layer suchthat the warpage of the substrate during the manufacturing of thesemiconductor package 100′ is significantly reduced. This enables fullblock array layout to be formed with large frame size to increase unitdensity as per FIG. 7A and reduce cost significantly. The copper cladlayer allows the conductive carrier to be processed as per full copperor copper-alloy carrier to form the substrate.

In addition, the conductive carrier 110 defines an array of substrateunit region 100 a, the cavity 110 r surrounds a substrate unit region100 a or a plurality of substrate unit regions 100 a. To illustrate thefeatures of the structure more clearly, the structure of singlesubstrate unit region 100 a is shown in 10C to 10I.

A first photo-resist layer 190 is formed on the upper surface 110 u ofthe conductive carrier 110, preferably by lamination, screen-printing orspin-coating process.

As shown in FIG. 10B, at least one lead pad opening 190 a is formed onthe first photo-resisting layer 190 to expose the upper surface 110 u ofthe conductive carrier 110, preferably by photolithography.

At least one die-attach pad opening 190 b is formed on the firstphoto-resisting layer 190. Preferably but not limited, the lead padopening 190 a and the die-attach pad opening 190 b are formedsimultaneously during the same process.

As shown in FIG. 10C, a first surface finishing layer 140 is formed inthe lead pad opening 190 a and the die-attach pad opening 190 b of thefirst photo-resist layer 190 on the upper surface 110 u of theconductive carrier 110, preferably by electrolytic plating. In otherembodiments, the first surface finishing layer 140 may be omitted; orthe first surface finishing layer 140 may be formed after the substrate110 has been removed (Please refer to the contents in FIG. 12).

As shown in FIG. 10C, a first metal layer 120 is subsequently formed inthe lead pad opening 190 a and the die-attach pad opening 190 b of thefirst photo-resist layer 190 on the upper surface of the first surfacefinishing layer 140, preferably by electrolytic plating. In anotherembodiment when the first surface finishing layer 140 may be omitted,the first metal layer 120 is formed directly on the upper surface 110 uon the conductive carrier 110.

The first metal layer 120 forms at least one lead pad 121 and die-attachpad 122. The lead pad 121, having a first upper surface 121 u, is formedin the lead pad opening 190 a on the first photo-resisting layer. Thedie-attach pad 122, having a first upper surface 122 u, is formed in thedie-attach opening 190 a on the first photo-resisting layer 190.

As shown in FIG. 10D, a second photo-resist layer 191 is formed on thefirst photo-resist layer 190, preferably by lamination, screen-printingor spin-coating process.

As shown in FIG. 10D, at least one bond pad opening 191 a is formed onthe second photo-resisting layer 191, preferably by photolithography toexpose preferably part of the first upper surface 121 u of the lead pad121 and part of the first upper surface 122 u of the die-attach pad 122in the bond pad opening 191 a. In addition, a part 190 c of the firstphoto-resist layer 190 is exposed from the opening 191 a.

The bond pad opening 191 a exposes preferably part of the first uppersurface 121 u of the lead pad 121 and part of the first upper surface122 u of the die-attach pad 122, such that the bond pad 122 and thedie-attach barrier 132 is formed on the exposed lead pad 121 and theexposed die-attach pad 122. In addition, since the second photo-resistlayer 191 does not cover the part 190 c of the first photo-resist layer190, the locking anchorage 131 a and 132 a (shown in FIG. 10E) areallowed to form without being confined by the first photo-resist layer190 and overhang outward from the edge 121 s 1 of the lead pad 121 andthe edge 122 s of the die-attach pad 122 respectively to form on thepart 190 c. In one embodiment, the second photo-resist layer 191 maycover a part (for example, the middle portion of the part 190 c or otherportion except the part 190 c) of the part 190 c of the firstphoto-resist layer 190. Furthermore the size and location of the bondpad opening 191 a determine the design of the bond pad 131 and thedie-attach barrier 132 as well as the directions of the lockinganchorage 131 a and 132 a.

The second photo-resist layer 191 covers a part of the lead pad 121,such that the area of the second upper surface 131 u of the bond pad 131is smaller than the area of the first upper surface 121 u of the leadpad 121.

The center of the lead pad opening 190 a of the first photo-resist layer190 is offset a third distance D3 from the center of the bond padopening 191 a of the second photo-resist layer 191. The center of thedie-attach pad opening 190 b of the first photo-resist layer 190 isoffset a third distance D4 from the center of the bond pad opening 191 aof the second photo-resist layer 191.

In addition, part 191 c of the second photo-resist layer 191 maycorrespond to the center area of the die-attach pad 122 thus enablingthe die-attach barrier 132 to form around the die-attach pad such thatits geometric center may substantially coincide with the center 122 c ofthe die-attach pad 122 (center 122 c is in FIG. 6).

As shown in FIG. 10E, a second metal layer 130 is formed, preferably byelectrolytic plating. The second metal layer 130 forms at least one bondpad 131 and at least one die-attach barrier 132.

The bond pad 131 and the die-attach barrier 132 are formed on the leadpad 121 and the die-attach pad 122 respectively. The bond pad 131,having a second upper surface 131 u, is formed in the bond pad opening191 a of the second photo-resist layer 191. The bond pad 131 overlapsand in contact with the first upper surface 121 u of the lead pad 121 asexposed in the bond pad opening 191 a of the second photo-resist layer191, wherein the area of the second upper surface 131 u of the bond pad131 is smaller than the area of the first upper surface 121 u of thelead pad 121.

The die-attach barrier 132 is formed in the bond pad opening 191 a ofthe second photo-resist layer 191 and is positioned surrounding thedie-attach pad 122. The die-attach barrier has a second upper surface132 u, wherein the area of the second upper surface 132 u is smallerthan the area of the area of the first upper surface 122 u of thedie-attach pad 122. The die-attach barrier 132 defines the die-attachcavity 132 r from which the first upper surface 122 u of the die-attachpad 122 is exposed.

After the bond pad 131 is formed, the center 121 c of the lead pad 121is offset a first distance D1 from the center 131 c of the bond pad 131(first distance D1 is illustrated in FIG. 2.). Similarly, the center 122c of the die-attach pad 122 is offset a second distance D2 from theextended axis 132 c of the die-attach barrier 132 (second distance D2 isillustrated in FIG. 1 and FIG. 6).

During the electrolytic plating, the second metal layer extends beyondthe edge of the lead pad 121 and the die-attach barrier 132 indirections where the part 190 c of the first photo-resist layer 190 isexposed. Under such circumstance, the locking anchorage 131 a of thebond pad 131 overhangs outward from the edge 12151 of the lead pad 121,and the locking anchorage 132 a of the die-attach barrier 132 overhangsoutward from the edge 122 s of the die-attach pad 121.

The size of the locking anchorage 131 a of the bond pad 131 ispreferably between 10 um to 80 um. The size of the locking anchorage 131a does not affect the removing of the first photo-resist layer 190 andthe second photo-resist layer 191. That is, the first photo-resist layer190 and the second photo-resist layer 191 can be completely removed.Similarly, the size of the locking anchorage 132 a of the die-attachbarrier 132 is between 10 um to 80 um. The size of the locking anchorage132 a does not affect the removing of the first photo-resist layer 190and the second photo-resist layer 191. That is, the first photo-resistlayer 190 and the second photo-resist layer 191 can be completelyremoved.

The locking anchorage 131 a and 132 a are not limited to extend in asingle direction. In another embodiment, the locking anchorage 131 aand/or 132 a may extend and overhang outward on two edges or multipleedges for better anchoring of the structure. In addition, the design ofthe locking anchorage 131 a and 132 a is not limited to the embodimentsin the invention.

Referring further to FIG. 10E, a second surface finishing layer 150 isformed on the second metal layer 130, preferably by electrolytic platingand covers the bond pad 131 and the die-attach barrier 132. In otherembodiments, the second surface finishing layer 150 may be omitted orselective plating may be performed by means of a third photo-resistlayer (not shown) to further reduce the area of the second surfacefinishing layer formed on the second metal layer.

As shown in FIG. 10F, the first photo-resist layer 190 and the secondphoto-resist layer 191 are removed by chemical stripping to form thesubstrate 100 depicted in FIG. 1. After the first photo-resist layer 190and the second photo-resist layer 191 are removed, part of the firstupper surface 121 u of the lead pad 121 is exposed.

The following paragraphs describe a method of forming the semiconductorpackage shown in FIG. 8. The descriptions start after the semiconductorsubstrate is formed as shown in FIG. 10F after the removal of the firstphoto-resist layer 190 and the second photo-resist layer 191.

As shown in FIG. 10G, at least one semiconductor die 160 is positionedon the die-attach pad 122, wherein the semiconductor die 160 ispositioned in the cavity 132 r and adhered to the first upper surface122 u of the die-attach pad 122 by an adhesive 180. The die-attachbarrier contains the epoxy within the defined cavity of the die-attachpad to prevent the adhesive from seeping out onto unnecessary regions.Preferably but not limited, the adhesive 180 is thermally-cured afteradhering the semiconductor to the die-attach pad.

As shown in FIG. 100, the semiconductor die 160 is electricallyconnected to the bond pad 131 via first connection element 161,preferably by wire-bonding. The first connection element 161 connectsthe semiconductor die 160 to the second surface finishing layer 150 (orthe bond pad 131 under the circumstance where the second surfacefinishing layer is omitted). Although not shown, the first connectionelement may also connect the semiconductor die 160 to the die-attachbarrier 132.

As shown in FIG. 10H, the first metal layer 120, the second metal layer130 and the semiconductor die 160 are encapsulated by an encapsulationlayer 170. Furthermore, the encapsulation layer 170 also encapsulatesthe first connection element 161, the adhesive 180, the first surfacefinishing layer 140, the second surface finishing layer 150 and theupper surface 110 u of the conductive carrier. Preferably, theencapsulation layer is formed by compression molding, injection moldingor transfer molding with molding compound.

Prior to forming the encapsulation layer, the exposed surface of thefirst metal layer 120 may be chemically enhanced with brown or blackoxide treatment to improve the adhesion with the molding compound forbetter reliability.

As shown in FIG. 10I, the conductive carrier 110 is removed, preferablyby chemical etching, to expose the first surface finishing layer 140 andthe third lower surface 170 b of the encapsulation layer 170. Under thecircumstance where the first surface finishing layer 140 is omitted, thefirst lower surface 121 b of the lead pad 121 is exposed.

FIG. 11 shows the cross-sectional view of the semiconductor structuredepicted in FIG. 10I after the conductive carrier is removed. After theconductive carrier 110 is removed, the protruding wall 172 is exposed.Wherein, the shape and the position of the protruding wall 172correspond to that of the cavity 110 r of the conductive carrier 110. Assuch, the protrusion wall 172 may be a continuous ring or severalseparately positioned blocks. The protrusion wall 172 strengthens thesemiconductor structure for subsequent handling and processing toprevent damage especially when the thickness is less than 0.5 mm, thusenabling thin semiconductor package to be formed.

In another embodiment, the protrusion wall may be form on upper portionof the encapsulation layer. Through the design of a slot in the top moldtool corresponding to the protrusion wall, after the encapsulation layeris formed, the protrusion wall is formed on upper portion of theencapsulation layer. Under this situation, the cavity 110 r on theconductive carrier 110 may be omitted.

Subsequently solder ball 193 may be formed on the lead pad 121 or thefirst surface finishing layer 140.

The semiconductor package 100′ as shown in FIG. 8 or 9 is subsequentlyformed after singulation using laser or mechanical sawing. Moreover,solder balls may be attached to the lead pad 121 before or aftersingulation. In singulation, the protruding wall 172 of FIG. 11 isremoved.

When using the conductive carrier with a cavity to form the protrusionwall 172, the manufacturing method further comprises of forming at leastone cavity 110 r in the conductive carrier 110 as shown in FIG. 10A,preferably by photolithography followed by chemical etching.

Referring to FIG. 12, the top view of a substrate of another embodimentis shown. The first metal layer 120 on the conductive carrier 110comprises a connection frame 123. The connection frame 123 connects alllead pad 121 and all die-attach pad 122 together such that all lead pad121 and all die-attach pad 122 are electrically connected via theconnection frame. By means of the connection frame, the first surfacefinishing layer 130 may be formed by electrolytic plating after theconductive carrier 110 has been removed. Specifically, since the leadpad 121 and the die-attach pad 122 are electrically connected by theconnection frame 123, if the electrode (not illustrated) of theelectrolytic plating device is connected to the connection frame 123,electrical current will be able to flow through and the finishing layer140 may be formed on the first lower surface 121 b of the lead pad 121(FIG. 10I) and on the first lower surface 122 b of the die-attach pad122 (FIG. 10I). In the subsequent sawing process, the semiconductorpackage 100′ is singulated according to the edges of the substrate unitregion 100 a to remove the connection frame 123 such that the lead pad121 is electrically isolated from one another as well as from thedie-attach pad 122. In the embodiment, the edge of the lead pad 121 isexposed on the side of the semiconductor package 100′ after the sawingprocess.

The above embodiments of the invention describe the structure of thesemiconductor package, substrate and the method of forming thereof andtheir unique features are listed below:

(1) The encapsulation layer has at least one connection part, the bondpad and the die-attach barrier interlock with the connection part suchthat the bond pad and the die-attach barrier are positioned more stably.

(2). The bond pad and the lead pad, as well as the die-attach barrierand the die-attach pad form locking anchorages that helps to anchor therespective structures within the molding compound to improve reliabilityby prevent the respective structures from dropping out from the package.

(3). A step feature is formed between the bond pad and the external leadto expose the upper surface of the external lead and improve theadhesion of the structure to the molding compound. The exposed surfacemay be further treated chemically with brown or black oxide to enhancethe adhesion strength with the molding compound and improve reliability.

(4). A cavity is defined by the die-attach barrier on the die-attach padfor containing the adhesive when adhering a semiconductor die to thedie-attach pad. Due to the presence of the cavity, the adhesive will notseep out onto unnecessary regions, hence improving reliability.Furthermore, the cavity may also help to reduce the overallsemiconductor package thickness by placing the die lower than the bondpad/die-attach barrier level.

(5) The first metal layer and the second metal layer form a leadframestructure; the leadframe structure may be a very thin electrolyticplated layer that reduces the thickness of the substrate and hence thesemiconductor package.

(6) The encapsulation layer has least one protruding wall. Theprotruding wall helps to reduce warpage and strengthen the structure ofthe semiconductor package during the manufacturing, assembly andhandling process. This enables thin semiconductor packaging.

(7). The use of steel material as the conductive carrier havingcompatible coefficient of thermal expansion (CTE) with conventionalmolding compound minimizes warpage during the manufacturing process byreducing CTE mismatch and enables a full block array substrate unitlayout to be formed.

While the invention has been described and illustrated with reference tospecific embodiments thereof, these descriptions and illustrations donot limit the invention. It should be understood by those skilled in theart that various changes may be made and equivalents may be substitutedwithout departing from the true spirit and scope of the invention asdefined by the appended claims. The illustrations may not necessarily bedrawn to scale. There may be distinctions between the artisticrenditions in the present disclosure and the actual apparatus due tomanufacturing processes and tolerances. There may be other embodimentsof the present invention which are not specifically illustrated. Thespecification and the drawings are to be regarded as illustrative ratherthan restrictive. Modifications may be made to adapt a particularsituation, material, composition of matter, method, or process to theobjective, spirit and scope of the invention. All such modifications areintended to be within the scope of the claims appended hereto. While themethods disclosed herein have been described with reference toparticular operations performed in a particular order, it will beunderstood that these operations may be combined, sub-divided, orre-ordered to form an equivalent method without departing from theteachings of the invention. Accordingly, unless specifically indicatedherein, the order and grouping of the operations are not limitations ofthe invention.

1. A substrate, comprising: a conductive carrier; a first metal layerformed on the conductive carrier, wherein the first metal layercomprises an lead pad, and the lead pad has a first upper surface; asecond metal layer formed on the first metal layer, wherein the secondmetal layer comprises a bond pad, the bond pad on overlaps and incontact with the first upper surface of the first metal layer, and thefirst upper surface of the lead pad is partially exposed; wherein, apart of the bond pad overhang outward from a edge of the lead pad. 2.The substrate according to claim 1, wherein the center of the lead padis offset a first distance from the center of the corresponding bondpad.
 3. The substrate according to claim 1, wherein the bond pad has asecond upper surface, the area of the second upper surface of the bondpad is smaller than the area of the first upper surface of the lead pad.4. The substrate according to claim 1, wherein the first metal layerfurther comprises a die-attach pad having a first upper surface, and thesecond metal layer further comprise a die-attach barrier around thedie-attach pad and has a second upper surface; wherein, the first uppersurface of the die-attach pad is partially exposed, the area of thesecond upper surface of the die-attach barrier is smaller than the areaof the first upper surface of the corresponding die-attach pad, and apart of the die-attach barrier overhang outward from an edge of thedie-attach.
 5. The substrate according to claim 1, wherein the center ofthe die-attach pad is offset a second distance from the center of thecorresponding die-attach barrier.
 6. The substrate according to claim 4,the die-attach barrier defines a cavity from which the first uppersurface of the die-attach pad is exposed.
 7. The substrate according toclaim 1, wherein the die-attach barrier is a ground ring.
 8. Thesubstrate according to claim 4, wherein the second metal layer has asecond upper surface, the substrate further comprises: a first surfacefinishing layer formed between the conductive carrier and the firstmetal layer; and a second surface finishing layer formed on the secondupper surface of the second metal layer.
 9. The substrate according toclaim 8, wherein the first surface finishing and second surfacefinishing layers is selected from the group consisting of Au, Pd, Ni,Cu, Sn, Ag and combinations thereof, and the first and second metallayers is selected from the group Cu, Ni and combinations thereof. 10.The substrate according to claim 8, wherein the conductive carrierfurther comprises of a cavity surrounding a substrate unit region or aplurality of substrate unit regions.
 11. The substrate according toclaim 1, wherein the conductive carrier has a coefficient of thermalexpansion of 10˜15 ppm/° C. and comprises of an inner steel core layerand an outer copper clad layer.
 12. A semiconductor package, comprising:a first metal layer formed on the conductive carrier, wherein the firstmetal layer comprises a lead pad, and the lead pad has a first uppersurface and a first lower surface opposite to the first upper surface; asecond metal layer formed on the first metal layer, wherein the secondmetal layer comprises a bond pad, the bond pad on overlaps and incontact with the first upper surface of the first metal layer, the firstupper surface of the lead pad is partially exposed, and a part of thebond pad overhang outward from an edge of the lead pad; a semiconductordie electrically connected to the bond pad via a plurality of firstconnection elements; and an encapsulation layer encapsulates the firstmetal layer, the second metal layer and the semiconductor die, whereinthe first lower surface of the first metal layer is exposed.
 13. Thesemiconductor package according to claim 12, wherein the center of thelead pad is offset a first distance from the center of the correspondingbond pad.
 14. The semiconductor package according to claim 12, whereinthe bond pad has a second upper surface, the area of the second uppersurface of the bond pad is smaller than the area of the first uppersurface of the lead pad.
 15. The semiconductor package according toclaim 12, wherein the first metal layer further comprises a die-attachpad having a first upper surface, and the second metal layer furthercomprise a die-attach barrier around the die-attach pad and has a secondupper surface; wherein, the first upper surface of the die-attach pad ispartially exposed, the area of the second upper surface of thedie-attach barrier is smaller than the area of the first upper surfaceof the corresponding die-attach pad, and a part of the die-attachbarrier overhang outward from an edge of the die-attach.
 16. Thesemiconductor package according to claim 15, wherein the center of thedie-attach pad is offset a second distance from the center of thecorresponding die-attach barrier.
 17. The semiconductor packageaccording to claim 15, the die-attach barrier defines a cavity fromwhich the first upper surface of the die-attach pad is exposed.
 18. Thesemiconductor package according to claim 17, wherein the semiconductordie is positioned within the cavity of the die-attach barrier andadhered to the first upper surface of the die-attached pad by anadhesive; wherein, the adhesive is disposed within the cavity of thedie-attach barrier.
 19. The semiconductor package according to claim 15,wherein the die-attach barrier is a ground ring, and the semiconductordie is electrically connected to the ground ring via a plurality ofsecond connection elements.
 20. The semiconductor package according toclaim 15, wherein the second metal layer has a second upper surface, thesemiconductor package further comprises: a first surface finishing layerformed between the conductive carrier and the first metal layer; and asecond surface finishing layer formed on the second upper surface of thesecond metal layer.
 21. The semiconductor package according to claim 20,wherein the first surface finishing and second surface finishing layersis selected from the group consisting of Au, Pd, Ni, Cu, Sn, Ag andcombinations thereof, and the first and second metal layers is selectedfrom the group Cu, Ni and combinations thereof.
 22. The semiconductorpackage according to claim 12, wherein the exposed first lower surfaceof the lead pad is recessed inward from the encapsulation layer.
 23. Thesemiconductor package according to claim 12, wherein the conductivecarrier comprises: a protruding wall surrounding a substrate unit regionor a plurality of substrate unit regions.
 24. A manufacturing method offorming a substrate, comprising: providing a conductive carrier; forminga first photo-resist layer on the conductive carrier; forming an leadpad opening on the first photo-resist layer to expose the conductivecarrier; forming a first metal layer, wherein the first metal layercomprises an lead pad, the lead pad is formed in the lead pad opening ofthe first photo-resist layer and has a first upper surface; forming asecond photo-resist layer on the first photo-resist layer; forming abond pad opening on the second photo-resist layer to expose the firstupper surface of the lead pad; forming a second metal layer, wherein thesecond metal layer comprises a bond pad, the bond pad is formed in thebond pad opening of the second photo-resist layer and has a second uppersurface, and the bond pad overlaps and in contact with the first uppersurface of the lead pad; and removing the first and second photo-resistlayer, wherein the first upper surface of the lead pad is partiallyexposed and a part of the bond pad overhang outward from an edge of thelead pad.
 25. The manufacturing method according to claim 24, whereinthe center of the lead pad opening of the first photo-resist layer isoffset a third distance from the center of the corresponding bond padopening of the second photo-resist layer such that the center of thelead pad is offset a first distance from the center of the correspondingbond pad.
 26. The manufacturing method according to claim 24, whereinthe area of the bond pad opening of the second photo-resist layer issmaller than that of the lead pad opening of the first photo-resistlayer such that the area of the second upper surface of the bond pad issmaller than the area of the first upper surface of the correspondinglead pad.
 27. The manufacturing method according to claim 24, furthercomprises: forming a die-attach pad opening on the first photo-resistlayer; in the step of forming the first metal layer, the first metallayer comprises a die-attach pad, the die-attach pad is formed in thedie-attach pad opening and has a first upper surface; in the step offorming the bond pad opening, a part of the first upper surface of thedie-attach pad is exposed from the bond pad opening; in the step offorming the second metal layer, the second metal layer further comprisesa die-attach barrier, the die-attach barrier is formed in the bond padopening is formed along a periphery of the die-attach pad; wherein, thearea of the second upper surface of the die-attach barrier is smallerthan the area of the first upper surface of the corresponding die-attachpad, and a part of the die-attach barrier overhang outward from an edgeof the die-attach pad.
 28. The manufacturing method according to claim27, wherein the center of the die-attach pad opening of the firstphoto-resist layer is offset a fourth distance from the center of thecorresponding bond pad opening of the second photo-resist layer suchthat the center of the die-attach pad is offset a second distance fromthe center of the corresponding die-attach barrier.
 29. Themanufacturing method according to claim 27, wherein the die-attachbarrier defines a cavity from which the first upper surface of thedie-attach pad is exposed.
 30. The manufacturing method according toclaim 27, wherein the die-attach barrier is a ground ring.
 31. Themanufacturing method according to claim 27, wherein before the step offorming the first metal layer, the method further comprises: forming afirst surface finishing layer in the conductive carrier; and after thestep of forming the first metal layer, the method further comprises:forming a second surface finishing layer on the second metal layer. 32.The manufacturing method according to claim 31, wherein the firstsurface finishing and second surface finishing layers is selected fromthe group consisting of Au, Pd, Ni, Cu, Sn, Ag and combinations thereof,and the first and second metal layers is selected from the group Cu, Niand combinations thereof.
 33. The manufacturing method according toclaim 24, wherein the conductive carrier has a coefficient of thermalexpansion of 10˜15 ppm/° C. and comprises of an inner steel core layerand an outer copper clad layer.
 34. The manufacturing method accordingto claim 24, further comprises: forming a cavity in the conductivecarrier, wherein the cavity surrounds a substrate unit region or aplurality of substrate unit regions.
 35. A manufacturing method offorming a substrate, comprising: providing a conductive carrier; forminga first photo-resist layer on the conductive carrier; forming an leadpad opening on the first photo-resist layer to expose the conductivecarrier; forming a first metal layer, wherein the first metal layercomprises an lead pad and a die-attach pad, the lead pad is formed inthe lead pad opening of the first photo-resist layer and has a firstupper surface and a second upper surface opposite the first uppersurface, the die-attach pad is formed in the die-attach pad opening andhas a first upper surface; forming a second photo-resist layer on thefirst photo-resist layer; forming a bond pad opening on the secondphoto-resist layer to expose the first upper surface of the lead pad andthe first upper surface of the die-attach pad; forming a second metallayer, wherein the second metal layer comprises a bond pad, the bond padis formed in the bond pad opening of the second photo-resist layer andhas a second upper surface, and the bond pad overlaps and in contactwith the first upper surface of the lead pad; removing the first andsecond photo-resist layer, wherein the first upper surface of the leadpad is partially exposed and a part of the bond pad overhang outwardfrom an edge of the lead pad; disposing a semiconductor die on thedie-attach pad; electrically connecting the bond pad and thesemiconductor die via a plurality of first connection elements; formingan encapsulation layer encapsulating the first metal layer, the secondmetal layer and the semiconductor die; and removing the conductivecarrier, wherein the first lower surface of the lead pad is exposed. 36.The manufacturing method according to claim 35, wherein the center ofthe lead pad opening of the first photo-resist layer is offset a thirddistance from the center of the corresponding bond pad opening of thesecond photo-resist layer such that the center of the lead pad is offseta first distance from the center of the corresponding bond pad.
 37. Themanufacturing method according to claim 35, wherein the area of the bondpad opening of the second photo-resist layer is smaller than the area ofthe lead pad opening of the first photo-resist layer such that the areaof the second upper surface of the bond pad is smaller than the area ofthe first upper surface of the corresponding lead pad.
 38. Themanufacturing method according to claim 35, wherein in the step offorming the second metal layer, the second metal layer further comprisesa die-attach barrier, the die-attach barrier is formed in the bond padopening is formed along a periphery of the die-attach pad; wherein, thearea of the second upper surface of the die-attach barrier is smallerthan the area of the first upper surface of the corresponding die-attachpad, and a part of the die-attach barrier overhang outward from an edgeof the die-attach pad.
 39. The manufacturing method according to claim38, wherein the center of the die-attach pad opening of the firstphoto-resist layer is offset a fourth distance from the center of thecorresponding bond pad opening of the second photo-resist layer suchthat the center of the die-attach pad is offset a second distance fromthe center of the corresponding die-attach barrier.
 40. Themanufacturing method according to claim 38, wherein the die-attachbarrier defines a cavity from which the first upper surface of thedie-attach pad is exposed.
 41. The manufacturing method according toclaim 38, wherein the die-attach barrier is a ground ring, and thesemiconductor die is electrically connected to the ground ring via aplurality of second connection elements.
 42. The manufacturing methodaccording to claim 38, wherein before the step of forming the firstmetal layer, the method further comprises: forming a first surfacefinishing layer in the conductive carrier; and after the step of formingthe first metal layer, the method further comprises: forming a secondsurface finishing layer on the second metal layer.
 43. The manufacturingmethod according to claim 42, wherein the first surface finishing andsecond surface finishing layers is selected from the group consisting ofAu, Pd, Ni, Cu, Sn, Ag and combinations thereof, and the first andsecond metal layers is selected from the group Cu, Ni and combinationsthereof.
 44. The manufacturing method according to claim 35, wherein theconductive carrier has a coefficient of thermal expansion of 10˜15 ppm/°C. and comprises of an inner steel core layer and an outer copper cladlayer.
 45. The manufacturing method according to claim 35, furthercomprises: forming a cavity in the conductive carrier, wherein thecavity surrounds a substrate unit region or a plurality of substrateunit regions; in the step of the forming the encapsulation layer, theencapsulation layer is formed in the cavity of the conductive carrier,wherein the encapsulation layer comprises a protruding wallcorresponding to the cavity of the conductive carrier.